POLARITONS IN SEMICONDUCTOR MICROCAVITIES - EFFECT OF BRAGG CONFINEMENT

被引:8
|
作者
CHEN, Y [1 ]
TREDICUCCI, A [1 ]
BASSANI, F [1 ]
机构
[1] SCUOLA NORMALE SUPER PISA,I-56100 PISA,ITALY
来源
JOURNAL DE PHYSIQUE IV | 1993年 / 3卷 / C5期
关键词
D O I
10.1051/jp4:1993598
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We propose a semiconductor microcavity structure in which the cavity layer is entirely both optically and electronically active. Optical spectra at normal incidence are studied theoretically, showing the drastic effects of the cavity polariton mode splitting and of the Bragg mirror confinement.
引用
收藏
页码:453 / 456
页数:4
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