POLARITONS IN SEMICONDUCTOR MICROCAVITIES - EFFECT OF BRAGG CONFINEMENT

被引：8

作者：

CHEN, Y ^{[1
]}

TREDICUCCI, A ^{[1
]}

BASSANI, F ^{[1
]}

机构：

[1] SCUOLA NORMALE SUPER PISA,I-56100 PISA,ITALY

来源：

JOURNAL DE PHYSIQUE IV | 1993年 / 3卷 / C5期

关键词：

D O I：

10.1051/jp4:1993598

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We propose a semiconductor microcavity structure in which the cavity layer is entirely both optically and electronically active. Optical spectra at normal incidence are studied theoretically, showing the drastic effects of the cavity polariton mode splitting and of the Bragg mirror confinement.

引用

页码：453 / 456

页数：4

共 10 条

[1]

Born M, 1980, PRINCIPLES OPTICS

[2] INTERFERENCE OF THE EXCITON-POLARITON WAVES IN GAAS THIN-LAYERS [J].