DEPOSITION OF SIO2 BY REACTIVE EXCIMER LASER ABLATION FROM A SIO TARGET

被引：25

作者：

FOGARASSY, E

SLAOUI, A

FUCHS, C

STOQUERT, JP

机构：

[1] Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n 292), 67037 Strasbourg Cedex

来源：

APPLIED SURFACE SCIENCE | 1990年 / 46卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(90)90141-L

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silicon dioxide thin films are deposited, for the first time, by reactive laser ablation from a silicon monoxide target, in oxygen atmosphere, with a high power pulsed excimer laser working at 193 nm (ArF) or 248 nm (KrF) wavelength. The specific influence of oxygen in the chamber during the laser processing on the stoichiometry and final properties of the oxide films deposited at ambient temperature are analyzed. © 1990.

引用

页码：195 / 199

页数：5

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