共 50 条
- [1] PHOTOELECTRIC PROPERTIES OF GERMANIUM S-TYPE DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 796 - 798
- [2] INVESTIGATION OF TRANSIENT PROCESSES IN PHOTOSENSITIVE S-TYPE DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (02): : 195 - 198
- [3] INVESTIGATION OF TRANSIENT PROCESSES IN PHOTOSENSITIVE S-TYPE DIODES. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (02): : 195 - 198
- [4] SOME INVESTIGATIONS OF S-TYPE DIODES MADE OF SEMIINSULATING GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1389 - +
- [6] SOME PROPERTIES OF S-TYPE DIODES MADE OF SEMIINSULATING GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (03): : 334 - 336
- [7] THERMAL QUENCHING OF INJECTION CURRENT AND FEATURES OF CURRENT-VOLTAGE CHARACTERISTICS OF S-TYPE DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (07): : 783 - 785
- [8] INVESTIGATION OF GALLIUM-PHOSPHIDE S-TYPE DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (07): : 887 - 889
- [9] SELECTIVE AND OSCILLATORY PROPERTIES OF S-TYPE GALLIUM ARSENIDE DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (08): : 1271 - &
- [10] NEGATIVE PHOTOCONDUCTIVITY OF S-TYPE GAAS-CR DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 51 - 53