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- [1] OSCILLATION CHARACTERISTICS IN INGAASP-INP DH LASERS WITH SELF-ALIGNED STRUCTUREIEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (12) : 1388 - 1395YANO, MNISHI, HTAKUSAGAWA, M
- [2] SELF-ALIGNED STRUCTURE INGAASP/INP DH LASERSFUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1982, 18 (02): : 287 - 305NISHI, HYANO, MHORI, K
- [3] NEW TRANSVERSE-MODE STABILIZED INGAASP-INP DH LASER WITH SELF-ALIGNED STRUCTUREIEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1842 - 1843NISHI, HYANO, MNISHITANI, YAKITA, KTAKUSAGAWA, M
- [4] DEGRADATION OF INGAASP-INP DH LASERS BY IN SOLDERJAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (08) : 1623 - 1624HORIKOSHI, YSAITO, HKAWASHIMA, M
- [5] Self-aligned packaging of an 8x8 InGaAsP-InP space switchIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (06) : 1445 - 1456Wenger, GSchienle, MBellermann, JAcklin, BMuller, JEichinger, SMuller, G
- [6] DEGRADATION OF INGAASP-INP DH LASERS IN WATER DUE TO FACET DETERIORATIONJAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) : L667 - L670FUKUDA, MWAKITA, K
- [7] INFLUENCES OF INTERFACIAL RECOMBINATION ON OSCILLATION CHARACTERISTICS OF INGAASP-INP DH LASERSIEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (06) : 661 - 667YANO, MNISHI, HTAKUSAGAWA, M
- [8] SELF-SUSTAINED PULSATION APPEARANCE IN INGAASP-INP DH LASERS DURING ACCELERATED OPERATIONJAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) : L153 - L155FUKUDA, MWAKITA, KIWANE, G
- [9] OXIDE DEFINED TJS']JS LASERS IN INGAASP-INP DH-STRUCTURESIEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 710 - 713BULL, DJPATEL, NBPRINCE, FCNANNICHI, Y
- [10] TEMPERATURE-DEPENDENCE OF THRESHOLD AND ELECTRICAL CHARACTERISTICS OF INGAASP-INP DH LASERSELECTRONICS LETTERS, 1980, 16 (17) : 653 - 654DUTTA, NKNELSON, RJBARNES, PA