DC CHARACTERISTICS OF PNP ALGAAS/GAAS NARROW-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：2

作者：

LIOU, LL ^{[1
]}

EZIS, A ^{[1
]}

IKOSSIANASTASIOU, K ^{[1
]}

EVANS, KR ^{[1
]}

STUTZ, CE ^{[1
]}

JONES, RL ^{[1
]}

机构：

[1] WRIGHT RES & DEV CTR,ELECTR TECHNOL LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 20期

关键词：

D O I：

10.1049/el:19890934

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1396 / 1398

页数：3

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[41] USE OF INN FOR OHMIC CONTACTS ON GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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[42] THERMAL-RESISTANCE MEASUREMENTS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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[43] EMITTER REGION DELAY TIME OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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[44] MODELING THE AVALANCHE MULTIPLICATION CURRENT OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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[45] NEGATIVE OUTPUT DIFFERENTIAL RESISTANCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

GAO, GB ;

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[46] 2-DIMENSIONAL SIMULATION OF GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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[47] GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR INTEGRATED-CIRCUIT APPLICATIONS [J].

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[48] NEUTRON-IRRADIATION EFFECTS ON ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

SCHRANTZ, GA ;

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KROEMER, H .

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[49] MINORITY ELECTRON-MOBILITY AND LIFETIME IN THE P+GAAS BASE OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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[50] MODELING OF NARROW-BASE BIPOLAR-TRANSISTORS INCLUDING VARIABLE-BASE-CHARGE AND AVALANCHE EFFECTS [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) :2323-2328

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