DC CHARACTERISTICS OF PNP ALGAAS/GAAS NARROW-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：2

作者：

LIOU, LL ^{[1
]}

EZIS, A ^{[1
]}

IKOSSIANASTASIOU, K ^{[1
]}

EVANS, KR ^{[1
]}

STUTZ, CE ^{[1
]}

JONES, RL ^{[1
]}

机构：

[1] WRIGHT RES & DEV CTR,ELECTR TECHNOL LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 20期

关键词：

D O I：

10.1049/el:19890934

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1396 / 1398

页数：3

共 50 条

[31] DC MODELING AND CHARACTERIZATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR HIGH-TEMPERATURE APPLICATIONS [J].

DIKMEN, CT ;

DOGAN, NS ;

OSMAN, MA .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1994, 29 (02) :108-116

[32] IDEALITY FACTOR OF EXTRINSIC BASE SURFACE RECOMBINATION CURRENT IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

LIU, W .

ELECTRONICS LETTERS, 1992, 28 (04) :379-380

[33] EFFECT OF EMITTER-BASE SPACING ON THE CURRENT GAIN OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

LEE, WS ;

UEDA, D ;

MA, T ;

PAO, YC ;

HARRIS, JS .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (05) :200-202

[34] NUMERICAL STUDY OF EMITTER-BASE JUNCTION DESIGN FOR ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

DAS, A ;

LUNDSTROM, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :863-870

[35] EXPERIMENTAL COMPARISON OF BASE RECOMBINATION CURRENTS IN ABRUPT AND GRADED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

LIU, W .

ELECTRONICS LETTERS, 1991, 27 (23) :2115-2116

[36] EFFECT OF REDUCED TEMPERATURE ON THE FT OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

LASKAR, J ;

HANSON, AW ;

CUNNINGHAM, BT ;

KOLODZEY, J ;

STILLMAN, G ;

PRASAD, SJ .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (06) :329-331

[37] CRITICAL PASSIVATION LEDGE THICKNESS IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

LIU, W ;

HARRIS, JS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (01) :6-9

[38] EFFECTS OF NEUTRON-IRRADIATION ON GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

SONG, Y ;

KIM, ME ;

OKI, AK ;

HAFIZI, ME ;

MURLIN, WD ;

CAMOU, JB ;

KOBAYASHI, KW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) :2155-2160

[39] HIGH-FREQUENCY POWER ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

CAMPS, T ;

BAILBE, JP ;

MARTY, A ;

TASSELLI, J ;

CAZARRE, A .

ELECTRONICS LETTERS, 1992, 28 (15) :1444-1445

[40] MONTE-CARLO SIMULATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

TOMIZAWA, K ;

AWANO, Y ;

HASHIZUME, N .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) :362-364

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