DC CHARACTERISTICS OF PNP ALGAAS/GAAS NARROW-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：2
作者：
LIOU, LL [1 ]
EZIS, A [1 ]
IKOSSIANASTASIOU, K [1 ]
EVANS, KR [1 ]
STUTZ, CE [1 ]
JONES, RL [1 ]
机构：
[1] WRIGHT RES & DEV CTR,ELECTR TECHNOL LAB,WRIGHT PATTERSON AFB,OH 45433
来源：
ELECTRONICS LETTERS | 1989年 / 25卷 / 20期
关键词：
D O I：
10.1049/el:19890934
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1396 / 1398
页数：3
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