TUNGSTEN-GOLD GATE GAAS MICROWAVE FET

被引：8
|
作者：
MORKOC, H
ANDREWS, J
SANKARAN, R
DULLY, JH
机构：
来源：
ELECTRONICS LETTERS | 1978年 / 14卷 / 16期
关键词：
D O I：
10.1049/el:19780345
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：514 / 515
页数：2
相关论文
共 50 条
  • [21] MONOLITHIC MICROWAVE GAAS POWER FET AMPLIFIER
    TSERNG, HQ
    SOKOLOV, V
    MICROWAVE JOURNAL, 1981, 24 (03) : 53 - &
  • [22] MICROWAVE-POWER GAAS FET AMPLIFIERS
    TSERNG, HQ
    SOKOLOV, V
    MACKSEY, HM
    WISSEMAN, WR
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (12) : 936 - 943
  • [23] A NEW GATE STRUCTURE VERTICAL-GAAS FET
    ADACHI, S
    ANDO, S
    ASAI, H
    SUSA, N
    IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) : 264 - 266
  • [24] DUAL-GATE GAAS-FET SWITCHES
    VORHAUS, JL
    FABIAN, W
    NG, PB
    TAJIMA, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 204 - 211
  • [25] AIR BRIDGE GATE FET FOR GAAS MONOLITHIC CIRCUITS
    BASTIDA, EM
    DOINZELLI, GP
    MICROWAVE JOURNAL, 1985, 28 (05) : 58 - 58
  • [26] A NOVEL CAMEL DIODE GATE GAAS-FET
    KOPP, W
    DRUMMOND, TJ
    WANG, T
    MORKOC, H
    SU, SL
    ELECTRON DEVICE LETTERS, 1982, 3 (04): : 86 - 88
  • [27] THE EFFECT OF A GATE RECESS ON GAAS-FET CHARACTERISTICS
    TAYRANI, R
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 347 - 354
  • [28] TEMPERATURE COMPENSATION FOR MICROWAVE GAAS-FET AMPLIFIERS
    RAFFAELLI, L
    GOLDWASSER, R
    MICROWAVE JOURNAL, 1986, 29 (05) : 315 - &
  • [29] HIGH-POWER MICROWAVE GAAS FET OSCILLATOR
    ABE, H
    TAKAYAMA, Y
    NEC RESEARCH & DEVELOPMENT, 1977, (45): : 58 - 65
  • [30] DUAL-GATE GAAS FET RF POWER LIMITER
    ROSEN, A
    WOLKSTEIN, HJ
    GOEL, J
    MATARESE, RJ
    RCA REVIEW, 1977, 38 (02): : 253 - 256
12345