TUNGSTEN-GOLD GATE GAAS MICROWAVE FET

被引：8
|
作者：
MORKOC, H
ANDREWS, J
SANKARAN, R
DULLY, JH
机构：
来源：
ELECTRONICS LETTERS | 1978年 / 14卷 / 16期
关键词：
D O I：
10.1049/el:19780345
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：514 / 515
页数：2
相关论文
共 50 条
  • [1] MICROWAVE GAAS SCHOTTKY GATE FET
    MATINO, H
    ELECTRONICS & COMMUNICATIONS IN JAPAN, 1973, 56 (07): : 90 - 96
  • [2] MICROWAVE GAAS INSULATED GATE FET
    LILE, DL
    COLLINS, DA
    MESSICK, L
    CLAWSON, AR
    APPLIED PHYSICS LETTERS, 1978, 32 (04) : 247 - 248
  • [3] MICROWAVE GaAs SCHOTTKY GATE FET.
    Matino, Haruhiro
    Electronics and Communications in Japan (English translation of Denshi Tsushin Gakkai Zasshi), 1973, 56 (07): : 90 - 96
  • [4] MODELING OF MICROWAVE GAAS FET IN COMMON-GATE OPERATION
    ZAPATAFERRER, J
    LORIOU, B
    ELECTRONICS LETTERS, 1977, 13 (04) : 106 - 107
  • [5] A GAAS GATE HETEROJUNCTION FET
    SOLOMON, PM
    KNOEDLER, CM
    WRIGHT, SL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1964 - 1964
  • [6] A GAAS GATE HETEROJUNCTION FET
    SOLOMON, PM
    KNOEDLER, CM
    WRIGHT, SL
    IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) : 379 - 381
  • [7] MOS STRUCTURES WITH CHLORINE GROWN OXIDE AND TUNGSTEN-GOLD METALLIZATION
    ILIEVA, M
    KAMENOVA, M
    POPOVA, A
    THIN SOLID FILMS, 1975, 30 (02) : 281 - 285
  • [8] MICROWAVE VARIABLE-GAIN AMPLIFIER WITH DUAL-GATE GAAS FET
    MAEDA, M
    MINAI, Y
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (12) : 1226 - 1230
  • [9] GaAs GATE HETEROJUNCTION FET.
    Solomon, P.M.
    Knoedler, C.M.
    Wright, S.L.
    Electron device letters, 1984, EDL-5 (09): : 379 - 381
  • [10] GAAS LOSSY GATE DIELECTRIC FET
    ANDRADE, TL
    BRASLAU, N
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1244 - 1245
12345