MEASUREMENTS OF HYDROGEN IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES USING NUCLEAR-REACTION PROFILING

被引:37
作者
MARWICK, AD
YOUNG, DR
机构
关键词
D O I
10.1063/1.341043
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2291 / 2298
页数:8
相关论文
共 30 条
[1]   A NEW MEASUREMENT OF THE 429 KEV N-15(P,ALPHA-GAMMA) C-12 RESONANCE - APPLICATIONS OF THE VERY NARROW WIDTH FOUND TO N-15 AND H-1 DEPTH LOCATION .2. APPLICATIONS [J].
AMSEL, G ;
COHEN, C ;
MAUREL, B .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 14 (02) :226-233
[2]  
BROWN DB, 1985, IEEE T NUCL SCI, V32, P3900
[3]  
Crank J., 1975, MATH DIFFUSION, V2nd
[4]   AN IN-BEAM-LINE LOW-LEVEL SYSTEM FOR NUCLEAR-REACTION GAMMA-RAYS [J].
DAMJANTSCHITSCH, H ;
WEISER, M ;
HEUSSER, G ;
KALBITZER, S ;
MANNSPERGER, H .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :129-140
[5]   CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES [J].
DEAL, BE ;
MACKENNA, EL ;
CASTRO, PL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :997-&
[6]   CURRENT-INDUCED HYDROGEN MIGRATION AND INTERFACE TRAP GENERATION IN ALUMINUM SILICON DIOXIDE SILICON CAPACITORS [J].
FEIGL, FJ ;
GALE, R ;
CHEW, H ;
MAGEE, CW ;
YOUNG, DR .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) :348-354
[7]   HYDROGEN MIGRATION UNDER AVALANCHE INJECTION OF ELECTRONS IN SI METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J].
GALE, R ;
FEIGL, FJ ;
MAGEE, CW ;
YOUNG, DR .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6938-6942
[8]   EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2 [J].
GDULA, RA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) :42-47
[10]   IDENTIFICATION OF ELECTRON TRAPS IN THERMAL SILICON DIOXIDE FILMS [J].
HARTSTEIN, A ;
YOUNG, DR .
APPLIED PHYSICS LETTERS, 1981, 38 (08) :631-633