SURFACE-STRUCTURE AND INTERFACE FORMATION OF SI ON GAAS(100)

被引：26

|

作者：

BACHRACH, RZ

BRINGANS, RD

OLMSTEAD, MA

UHRBERG, RIG

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583742

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1135 / 1140

页数：6

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