SURFACE-STRUCTURE AND INTERFACE FORMATION OF SI ON GAAS(100)

被引：26
|
作者：
BACHRACH, RZ
BRINGANS, RD
OLMSTEAD, MA
UHRBERG, RIG
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期
关键词：
D O I：
10.1116/1.583742
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1135 / 1140
页数：6
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