SURFACE-STRUCTURE AND INTERFACE FORMATION OF SI ON GAAS(100)

被引：26
作者：
BACHRACH, RZ
BRINGANS, RD
OLMSTEAD, MA
UHRBERG, RIG
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期
关键词：
D O I：
10.1116/1.583742
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1135 / 1140
页数：6
相关论文
共 23 条
[1]   RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO [J].
BACHRACH, RZ ;
BAUER, RS ;
CHIARADIA, P ;
HANSSON, GV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :335-343
[2]   SURFACE PHASES OF GAAS(100) AND ALAS(100) [J].
BACHRACH, RZ ;
BAUER, RS ;
CHIARADIA, P ;
HANSSON, GV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :797-801
[3]  
BACHRACH RZ, 1979, I PHYS C SER, V43, P1073
[4]  
BRINGANS RD, 1985, 17TH P INT C PHYS SE, P67
[5]  
BRINGANS RD, IN PRESS MATER RES S
[6]  
BRINGANS RD, IN PRESS PHYS SCRIPT
[7]   QUANTUM-WELL ALGA1-XAS-GAAS LASERS WITH INTERNAL (SI2)(GAAS)1-X BARRIERS [J].
BURNHAM, RD ;
HOLONYAK, N ;
HSIEH, KC ;
KALISKI, RW ;
NAM, DW ;
THORNTON, RL ;
PAOLI, TL .
APPLIED PHYSICS LETTERS, 1986, 48 (12) :800-802
[8]   THEORETICAL-STUDY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF THE CIS-4X4 RECONSTRUCTED GAAS(100)SURFACE [J].
CHADI, DJ ;
TANNER, C ;
IHM, J .
SURFACE SCIENCE, 1982, 120 (01) :L425-L430
[9]   ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :834-837
[10]   EFFECT OF THE MADELUNG POTENTIAL ON SURFACE CORE-LEVEL SHIFTS IN GAAS [J].
DAVENPORT, JW ;
WATSON, RE ;
PERLMAN, ML ;
SHAM, TK .
SOLID STATE COMMUNICATIONS, 1981, 40 (11) :999-1002
123