EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON GAAS SUBSTRATE BY ATMOSPHERIC-PRESSURE MOVPE USING DIMETHYLZINC AND HYDROGEN SELENIDE

被引：21
作者：
YODO, T
OKA, H
KOYAMA, T
YAMASHITA, K
机构：
[1] Tsukuba Research Laboratory, Nippon Sheet Glass Co., Ltd., Toyosato-machi, Tsukuba-gun, Ibaraki, 300-26, 5-4, Tokodai
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1987年 / 26卷 / 05期
关键词：
D O I：
10.1143/JJAP.26.L561
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Single crystalline layers of undoped ZnSe have been grown on GaAs substrates by atmospheric pressure MOVPE using dimethylzinc (DMZ) and hydrogen selenide (H2Se). Premature reactions typically encountered with this source combination can be eliminated completely, even at atmospheric pressure, by controlling the flow velocity of each source gas and the source gas mole ratio. For the first time, an excellent mirror surface morphology, as revealed by Nomarski interference microscopy, was obtained even for 8.2 µm thick epilayers grown at 300°C. © 1987 IOP Publishing Ltd.
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页码：L561 / L563
页数：3
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