GROWTH AND PROPERTIES OF INP SINGLE-CRYSTALS GROWN BY THE MAGNETIC-FIELD APPLIED LEC METHOD

被引：11

作者：

MIYAIRI, H

INADA, T

EGUCHI, M

FUKUDA, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 79卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90451-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：291 / 295

页数：5

相关论文

共 17 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &
[2] THE GROWTH AND PERFECTION OF SINGLE-CRYSTAL INDIUM-PHOSPHIDE PRODUCED BY THE LEC TECHNIQUE
COCKAYNE, B
BROWN, GT
MACEWAN, WR
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 9 - 15
[3] CONTROL OF DISLOCATION-STRUCTURES IN LEC SINGLE-CRYSTAL INP
COCKAYNE, B
BROWN, GT
MACEWAN, WR
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 48 - 54
[4] DISLOCATION CLUSTERS IN CZOCHRALSKI-GROWN SINGLE-CRYSTAL INDIUM-PHOSPHIDE
COCKAYNE, B
BROWN, GT
MACEWAN, WR
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) : 461 - 469
[5] CZOCHRALSKI SILICON CRYSTAL-GROWTH IN THE VERTICAL MAGNETIC-FIELD
HOSHIKAWA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L545 - L547
[6] METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP
HUBER, A
LINH, NT
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 29 (01) : 80 - 84
[7] DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING
JACOB, G
DUSEAUX, M
FARGES, JP
VANDENBOOM, MMB
ROKSNOER, PJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) : 417 - 424
[8] JACOB G, 1982, SEMIINSULATING 3 5 M, P2
[9] SUPPRESSION OF THERMAL-CONVECTION BY TRANSVERSE MAGNETIC-FIELD
KIM, KM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 427 - 429
[10] NUMERICAL SIMULATIONS OF THE CZOCHRALSKI BULK FLOW IN AN AXIAL MAGNETIC-FIELD - EFFECTS ON THE FLOW AND TEMPERATURE OSCILLATIONS IN THE MELT
MIHELCIC, M
WINGERATH, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) : 163 - 168