共 50 条
- [1] FREQUENCY DISPERSION OF AMBIPOLAR MOBILITY IN SEMICONDUCTORS WITH DEEP TRAPS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (02): : 160 - 163
- [2] THEORY OF INJECTION CURRENTS IN SEMICONDUCTORS WITH DEEP TRAPS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 16 (01): : 49 - 59
- [3] DOUBLE INJECTION CURRENTS IN SEMICONDUCTORS WITH DEEP IMPURITIES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (10): : 1189 - 1190
- [4] TRANSIENT AND ALTERNATING CURRENTS IN INSULATORS OR SEMICONDUCTORS - INFLUENCE OF DEEP TRAPS PHYSICAL REVIEW B, 1979, 19 (06): : 3252 - 3257
- [5] INFLUENCE OF CARRIER CAPTURE IN DEEP TRAPS ON SMALL-SIGNAL CHARACTERISTICS OF DOUBLE-INJECTION CURRENTS IN SEMICONDUCTORS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (01): : 97 - 105
- [7] Effect of interaction between deep impurity traps on thermally stimulated currents in semiconductors Inorganic Materials, 2011, 47 : 1183 - 1193
- [9] AMBIPOLAR DRIFT MOBILITY AND EFFECTIVE COEFFICIENT OF DIFFUSION IN COMPENSATED SEMICONDUCTORS WITH 2 DEEP LEVELS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (05): : 585 - 586
- [10] DEEP TRAPS IN WURTZITE SEMICONDUCTORS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 288 - 288