POTENTIAL APPLICATIONS OF GERMANIUM-SILICON HETEROJUNCTIONS AS PHOTOCELLS

被引：0
作者：
ZHUKOV, ND [1 ]
KLIMOV, BN [1 ]
机构：
[1] NG CHERNYSHEVSKII STATE UNIV,SARATOV,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 7卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：279 / 280
页数：2
相关论文
共 50 条
  • [41] HARDNESS OF GERMANIUM-SILICON ALLOYS AT ROOM TEMPERATURE
    WANG, CC
    ALEXANDER, BH
    ACTA METALLURGICA, 1955, 3 (05): : 515 - 516
  • [42] Electronic properties and deep levels in germanium-silicon
    Ringel, SA
    Grillot, PN
    GERMANIUM SILICON: PHYSICS AND MATERIALS, 1999, 56 : 293 - 346
  • [43] NEGATIVE RESISTANCE AND HYSTERESIS IN A GERMANIUM-SILICON HETEROJUNCTION
    WEI, LY
    SHEWCHUN, J
    PROCEEDINGS OF THE IEEE, 1963, 51 (06) : 946 - &
  • [44] DISLOCATIONS AT COMPOSITIONAL FLUCTUATIONS IN GERMANIUM-SILICON ALLOYS
    GOSS, AJ
    BENSON, KE
    PFANN, WG
    ACTA METALLURGICA, 1956, 4 (03): : 332 - 333
  • [45] Heterostructures of germanium nanowires and germanium-silicon oxide nanotubes and growth mechanisms
    Huang, J. Q.
    Chiam, S. Y.
    Chim, W. K.
    Wong, L. M.
    Wang, S. J.
    NANOTECHNOLOGY, 2009, 20 (42)
  • [46] CONDUCTION BAND STRUCTURE OF GERMANIUM-SILICON ALLOYS
    GLICKSMAN, M
    CHRISTIAN, SM
    PHYSICAL REVIEW, 1956, 104 (05): : 1278 - 1279
  • [47] SHORT-RANGE EFFECTS IN GERMANIUM-SILICON
    MARTINRODERO, A
    VERGES, JA
    TEJEDOR, C
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 99 (02): : 501 - 505
  • [48] DONOR LEVEL OF GOLD IN GERMANIUM-SILICON ALLOYS
    TAIROV, SI
    TAGIROV, VI
    SHAKHTAK.MG
    KULIEV, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (05): : 621 - &
  • [49] Properties of hydrogenated amorphous germanium-silicon films
    Bakirov, MY
    INORGANIC MATERIALS, 1996, 32 (06) : 576 - 578
  • [50] Core-Shell Germanium-Silicon Nanocrystal Floating Gate for Nonvolatile Memory Applications
    Liu, Hai
    Winkenwerder, Wyatt
    Liu, Yueran
    Ferrer, Domingo
    Shahrjerdi, Davood
    Stanley, Scott K.
    Ekerdt, John G.
    Banerjee, Sanjay K.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (12) : 3610 - 3614
12345