DEFECT TRAPPING OF ION-IMPLANTED DEUTERIUM IN FE

被引：168

作者：

MYERS, SM ^{[1
]}

PICRAUX, ST ^{[1
]}

STOLTZ, RE ^{[1
]}

机构：

[1] SANDIA LABS,LIVERMORE,CA 94550

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 09期

关键词：

D O I：

10.1063/1.326761

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The trapping of ion-implanted deuterium (D) by lattice damage in Fe was investigated in the temperature range 90-500 K. The D depth profile was determined by measuring the proton yield from the 3He-excited nuclear reaction D(3He,p)4He, and the D lattice location was obtained by ion channeling. Linear ramping of the temperature produced a sharp detrapping stage at 260 K and a broader release extending over 350-450 K. The release-vs-temperature data were analyzed by solving the diffusion equation with appropriate trapping terms, yielding 0.48 and ?0.81 eV for the binding enthalpies associated with the two stages. The 0.48-eV trap corresponds to D at a near-octahedral interstitial site, where it is believed to be associated with a vacancy.

引用

页码：5710 / 5719

页数：10

共 26 条

[1]

BERNSTEIN IM, 1976, INT MET REV, P269

[2] TRAPPING OF HYDROGEN ISOTOPES IN MOLYBDENUM AND NIOBIUM PRE-DAMAGED BY ION-IMPLANTATION [J].