RAMAN MEASUREMENT OF THE GRAIN-SIZE FOR SILICON CRYSTALLITES

The Raman spectral data were recorded in the backscattering configuration at room temperature. The samples were excited by a 488.0 nm Ar+ laser. The samples are a-Si:B:H prepared by the CVD method, using different deposition temperatures or doping levels A local low barrier range was induced by the boron atom in the structure of the disorder network. This low barrier implies that at room temperature H is able Owing to these effects, the degree of order was gradually decreased, so that the grain size of silicon crystallites increased. In principle this method can be extended to estimate grain size during crystallization of other amorphous materials.