Electrical Impedance Tomography potential sensitivity

被引:0
|
作者
Sushko, I. [1 ]
Gaidayenko, Y. [1 ]
Yakubenko, O. [1 ]
机构
[1] Natl Tech Univ Ukraine, Kiev Polytech Inst, Kiev, Ukraine
来源
VISNYK NTUU KPI SERIIA-RADIOTEKHNIKA RADIOAPARATOBUDUVANNIA | 2012年 / 50期
关键词
phantom; Electrical Impedance Tomography; sensitivity; increment; measuring accuracy; inhomogeneity;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The analysis of EIT phantom outline voltage measuring accuracy is carried out in this article. This accuracy is necessary for exposure of single inhomogeneity presence: "small" ( it's square is equal 3% of global phantom square), "middle" 08,5%) and "big" (19,59%) with different surface conductivity values of these inhomogeneities (background is phantom with surface conductivity s=1). Measuring was imitated by homogeneous phantom and phantoms with inhomogeneities voltage calculating and voltage difference computing (increment) between homogeneous phantom and phantoms with inhomogeneities. Inhomogeneities with bigger surface conductivity value than background conductivity value give significantly less voltage increments than inhomogeneities with smaller surface conductivity value than background. More sensitivity with closer position to phantom outline and bigger inhomogeneities size is illustrated by means of numerous increments values. Necessary measuring accuracy numerical assessments are proposed for considered inhomogeneities.
引用
收藏
页码:92 / 104
页数:13
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