MANY-BODY COULOMB EFFECTS IN ROOM-TEMPERATURE II-VI QUANTUM-WELL SEMICONDUCTOR-LASERS

被引:33
作者
CHOW, WW
KOCH, SW
机构
[1] UNIV MARBURG,DEPT PHYS,D-35032 MARBURG,GERMANY
[2] UNIV MARBURG,CTR MAT SCI,D-35032 MARBURG,GERMANY
关键词
D O I
10.1063/1.114258
中图分类号
O59 [应用物理学];
学科分类号
摘要
This letter investigates the gain medium properties in II-VI blue-green quantum well semiconductor lasers, including band structure and carrier interaction effects. Under room temperature conditions, the many-body Coulomb interactions in the electron-hole plasma are found to be significantly more important than in infrared III-V lasers. In particular, the interband Coulombic enhancement of the optical transitions, together with a band gap renormalization result in an increase in gain and a reduction in the antiguiding or linewidth enhancement factor.© 1995 American Institute of Physics.
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页码:3004 / 3006
页数:3
相关论文
共 18 条
[11]   VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS [J].
LAWAETZ, P .
PHYSICAL REVIEW B, 1971, 4 (10) :3460-&
[12]   ROOM-TEMPERATURE OPTICAL NONLINEARITIES IN GAAS [J].
LEE, YH ;
CHAVEZPIRSON, A ;
KOCH, SW ;
GIBBS, HM ;
PARK, SH ;
MORHANGE, J ;
JEFFERY, A ;
PEYGHAMBARIAN, N ;
BANYAI, L ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1986, 57 (19) :2446-2449
[13]   MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS [J].
LUTTINGER, JM ;
KOHN, W .
PHYSICAL REVIEW, 1955, 97 (04) :869-883
[14]  
MADELUNG O, 1982, LANDOLTBORNSTEIN NUM, V17, P62907
[15]   QUANTUM-WELLS, EXCITONS, AND LASERS AT BLUE-GREEN WAVELENGTHS IN ZNSE-BASED HETEROSTRUCTURES [J].
NURMIKKO, AV ;
GUNSHOR, RL ;
KOBAYASHI, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :2056-2061
[16]   BAND-OFFSET DETERMINATION AT STRAINED II-VI HETEROJUNCTIONS WITHIN A SELF-CONSISTENT TIGHT-BINDING MODEL [J].
PRIESTER, C ;
BERTHO, D ;
JOUANIN, C .
PHYSICA B-CONDENSED MATTER, 1993, 191 (1-2) :1-15
[17]   ESTIMATION OF CRITICAL THICKNESS AND BAND LINEUPS IN ZNCDSE ZNSSE STRAINED-LAYER SYSTEM FOR DESIGN OF CARRIER CONFINEMENT QUANTUM-WELL STRUCTURES [J].
WU, YH ;
ICHINO, K ;
KAWAKAMI, Y ;
FUJITA, S ;
FUJITA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (6A) :1737-1744
[18]   STRUCTURE-DEPENDENT THRESHOLD CURRENT-DENSITY FOR CDZNSE-BASED II-VI SEMICONDUCTOR-LASERS [J].
WU, YH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (07) :1562-1573