PRESSURE-DEPENDENCE OF THE FANO ASYMMETRY OF OPTICAL PHONONS IN ZN1-XCOXSE AND ZN1-XFEXSE

被引:8
作者
BAK, J
VENKATESWARAN, U
MAK, CL
SOORYAKUMAR, R
JONKER, BT
机构
[1] OAKLAND UNIV,DEPT PHYS,ROCHESTER,MI 48309
[2] USN,RES LAB,WASHINGTON,DC 20375
关键词
SEMICONDUCTORS; HIGH PRESSURE; RAMAN SPECTROSCOPY; PHONONS;
D O I
10.1016/0022-3697(94)00241-X
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Effects of hydrostatic pressure on the optical phonons in ZnSe doped with Co and Fe at 10 K and up to 5 GPa are presented. Raman spectra from Zn1-xCoxSe (x = 1.6%) show the LO phonon developing an asymmetry with increasing pressure while the asymmetry already present at 1 bar in the x = 7.4% sample increases slightly with pressure. The optical phonon in Zn1-xFexSe (x = 8.8%) shows no modifications to its line profile for all pressures. These results are discussed in terms of a coupling between the phonons and a Raman continuum that is thought to arise through a pressure tunable pd hybridization of the low lying crystal field levels and the valence band.
引用
收藏
页码:563 / 566
页数:4
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