BARRIER-FREE CONTACTS ON INDIUM PHOSPHIDE

被引：23

作者：

BECKER, R ^{[1
]}

机构：

[1] AEG TELEFUNKEN,FORSCH INST,7900 ULM,WEST GERMANY

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 11期

关键词：

D O I：

10.1016/0038-1101(73)90079-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1241 / 1249

页数：9

共 15 条

[1] MEASUREMENTS ON VELOCITY/FIELD CHARACTERISTIC OF INDIUM PHOSPHIDE [J].

BOERS, PM .

ELECTRONICS LETTERS, 1971, 7 (20) :625-+

[2] MICROWAVE GENERATION BY INP 3-LEVEL TRANSFERRED-ELECTRON OSCILLATORS [J].

COLLIVER, D ;

HILSUM, C ;

JOYCE, BD ;

MORGAN, JR ;

REES, HD ;

KNIGHT, JR .

ELECTRONICS LETTERS, 1970, 6 (14) :436-&

[3]

COLLIVER D, 1970, 3 P C GAAS AACH, P140

[4]

COLLIVER DJ, 1972, 4 INT S GAAS BOULD

[5] ETCHING BEHAVIOR OF THE (110) AND (100) SURFACES OF INSB [J].

GATOS, HC ;

LAVINE, MC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :433-436

[6] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J].

GATOS, HC ;

LAVINE, MC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :427-433

[7]

GATOS HC, 1960, SURFACE CHEMISTRY ME

[8] INP PULSED AND CW MILLIMETRE-WAVE OSCILLATORS [J].

GIBBONS, G ;

WHITE, PM .

ELECTRONICS LETTERS, 1971, 7 (07) :150-&

[9]

GRUBIN HL, 1972, 4 INT S GAAS BOULD

[10] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE [J].

HILSUM, C ;

REES, HD .

ELECTRONICS LETTERS, 1970, 6 (09) :277-&

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