INVESTIGATION OF MOST CHANNEL CONDUCTANCE IN WEAK INVERSION

[1] EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (09) : 344 - &

[2] LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 293 - +

[3] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +

[4] DECLERCK G, 1971, EUROCON LAUSANNE SWI

[5] EVERSTEYN FC, 1969, PHILIPS RES REP, V24, P15

[6] CARRIER SURFACE SCATTERING IN SILICON INVERSION LAYERS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 410 - &

[7] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +

[8] FOWLER AB, 1964, IBM J, V8, P410

[9] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 376 - 387

[10] SURFACE TRANSPORT IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1960, 118 (04): : 967 - 975

[1] EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (09) : 344 - &

[2] LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 293 - +

[3] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +

[4] DECLERCK G, 1971, EUROCON LAUSANNE SWI

[5] EVERSTEYN FC, 1969, PHILIPS RES REP, V24, P15

[6] CARRIER SURFACE SCATTERING IN SILICON INVERSION LAYERS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 410 - &

[7] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +

[8] FOWLER AB, 1964, IBM J, V8, P410

[9] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 376 - 387

[10] SURFACE TRANSPORT IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1960, 118 (04): : 967 - 975