GAAS PSEUDOHETEROJUNCTION BIPOLAR-TRANSISTOR WITH A HEAVILY CARBON-DOPED BASE

被引：5

作者：

NOZAKI, S

SAITO, K

SHIRAKASHI, J

QI, M

YAMADA, T

TOKUMITSU, E

KONAGAI, M

TAKAHASHI, K

MATSUMOTO, K

机构：

[1] NISHI TOKYO UNIV,DEPT ELECT & INFORMAT SCI,YAMANASHI 40901,JAPAN

[2] ELECTROTECH LABS,TSUKUBA,IBARAKI 305,JAPAN

[3] TOKYO INST TECHNOL,DEPT ELECT & ELECTR ENGN,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

PSEUDOHETEROJUNCTION BIPOLAR TRANSISTOR; MOMBE; CARBON DOPING; BAND-GAP NARROWING; HEAVY DOPING; INGAAS; GAAS;

D O I：

10.1143/JJAP.30.3840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A GaAs pseudo-heterojunction bipolar transistor with a heavily carbon-doped base grown by metalorganic molecular beam epitaxy was fabricated, and the highest dc current gain of 1.7 was obtained, which evidences band-gap narrowing in the base. However, hole injection from the base to the emitter still cannot be ignored, and the use of a heavily carbon-doped InGaAs base is proposed to improve transistor characteristics.

引用

收藏

页码：3840 / 3842

页数：3

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