IDENTIFICATIONS OF PHOTOLUMINESCENCE AND DEEP LEVEL TRANSIENT SPECTRA FOR TE-DOPED ALXGA1-XAS

被引：0

作者：

KANG, JY

HUANG, QS

LIN, H

CHEN, C

机构：

来源：

CHINESE PHYSICS LETTERS | 1990年 / 7卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：421 / 424

页数：4

共 10 条

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KANG J, UNPUB

[8] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

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[9] PHOTO-LUMINESCENCE OF THERMALLY TREATED N+ SI-DOPED AND SEMI-INSULATING CR-DOPED GAAS SUBSTRATES [J].

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[10]

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