CORE-LEVEL PHOTOEMISSION MEASUREMENTS OF VALENCE-BAND OFFSETS IN HIGHLY STRAINED HETEROJUNCTIONS - SI-GE SYSTEM

被引：98
作者：
SCHWARTZ, GP
HYBERTSEN, MS
BEVK, J
NUZZO, RG
MANNAERTS, JP
GUALTIERI, GJ
机构：
来源：
PHYSICAL REVIEW B | 1989年 / 39卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.39.1235
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：1235 / 1241
页数：7
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