PHOTOCONDUCTIVITY ANALYSIS OF CHROMIUM AND OXYGEN-RELATED LEVELS IN SEMI-INSULATING GAAS

被引：4

作者：

OKUMURA, T ^{[1
]}

ITOH, Y ^{[1
]}

IKOMA, T ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 06期

关键词：

deep level; photoconductivity; semi-insulating GaAs;

D O I：

10.1007/BF02651189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semi-insulating GaAs doped with different amounts of Cr and oxygen has been characterized by extrinsic photocon-ductivity spectra at room temperature. The shape of the spectrum depends on the amount of Cr and oxygen dopant. It is interpreted by the two-level model which assumes the lattice relaxation effect at the Cr and oxygen-related levels. The height of the photoconductivity hump around 0.9 eV depends on the concentration ratio of Cr to oxygen; the larger the ratio is, the higher the hump is. © 1979 AIME.

引用

页码：865 / 877

页数：13

共 16 条

[1] THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING [J].