INITIAL-STAGE OF PLASTIC-DEFORMATION OF SUBSTRATES IN HETEROSTRUCTURES

[1] ALTSHULER VM, 1971, SOVIET PHYS SOLID ST, V13, P2827

[2] SURFACE CHARGE AND STRESS IN SI-SIO2 SYSTEM [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1367 - 1375

[3] DIRECT OBSERVATION OF DISLOCATIONS DUE TO EPITAXY [J]. PHILOSOPHICAL MAGAZINE, 1961, 6 (71): : 1419 - &

[4] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 216 - 225

[5] GUTAKOVSKY AK, 1980, KRISTALLOGRAFIYA+, V25, P806

[6] CREEP CURVE OF SILICON WAFERS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 564 - 566

[7] DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 126 - 133

[8] REFLECTION X-RAY TOPOGRAPHY OF GAAS DEPOSITED ON GE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 292 - &

[9] EQUILIBRIUM STRUCTURE OF EPITAXIAL LAYERS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 37 (01): : 329 - 339

[10] The tension of metallic films deposited by electrolysis [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1909, 82 (553) : 172 - 175

[1] ALTSHULER VM, 1971, SOVIET PHYS SOLID ST, V13, P2827

[2] SURFACE CHARGE AND STRESS IN SI-SIO2 SYSTEM [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1367 - 1375

[3] DIRECT OBSERVATION OF DISLOCATIONS DUE TO EPITAXY [J]. PHILOSOPHICAL MAGAZINE, 1961, 6 (71): : 1419 - &

[4] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 216 - 225

[5] GUTAKOVSKY AK, 1980, KRISTALLOGRAFIYA+, V25, P806

[6] CREEP CURVE OF SILICON WAFERS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 564 - 566

[7] DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 126 - 133

[8] REFLECTION X-RAY TOPOGRAPHY OF GAAS DEPOSITED ON GE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 292 - &

[9] EQUILIBRIUM STRUCTURE OF EPITAXIAL LAYERS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 37 (01): : 329 - 339

[10] The tension of metallic films deposited by electrolysis [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1909, 82 (553) : 172 - 175