SURFACE DAMAGE AND STRAIN IN A SILICIDE SUBJECTED TO ION-IMPLANTATION

被引：0
|
作者：
SCHUTZ, RJ
TESTARDI, LR
WEISSMANN, S
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] RUTGERS STATE UNIV,NEW BRUNSWICK,NJ 08903
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C399 / C399
页数：1
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