DOPING IN SEMICONDUCTORS WITH VARIABLE ACTIVATION-ENERGY

A concept of doping that permits for the first time the freedom to design the desired activation energy of a dopant in a semiconductor is introduced and demonstrated. This doping engineering (DE) may also offer the possibility of achieving dopings in semiconductors in which a normally employed doping process is not successful, such as in wide band-gap II-VI semiconductors. Experimentally, we demonstrated that the normal activation energy, approximately 19-25 meV of beryllium (Be) in GaAs was reduced to 4 meV in DE GaAs/delta-Al0.3Ga0.7As(Be) sample.