High Temperature Sodium Bismuth Titanate Capacitors - A New Product Realized

被引:0
作者
Bridger, Keith [1 ]
Cooke, Arthur [1 ]
Schulze, Walter [2 ]
Weigner, James [3 ]
Sentz, Scott [4 ]
Stewart, Mike [4 ]
Duva, Frank [4 ]
机构
[1] Act Signal Technol, Linthicum Hts, MD 21090 USA
[2] Alfred Univ, New York State Coll Ceram, Alfred, NY 14802 USA
[3] Lockheed Martin, Bethesda, MD USA
[4] Novacap, Longueuil, PQ, Canada
来源
SAE INTERNATIONAL JOURNAL OF AEROSPACE | 2009年 / 1卷 / 01期
关键词
Sodium compounds - Permittivity - Capacitance - Ceramic capacitors - Bismuth compounds;
D O I
10.4271/2008-01-2863
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
This paper describes the development of a lead free, high temperature ceramic capacitor material having the base composition of (Na-0.5 Bi-0.5) TiO3. The goal is to modify this structure to create a material that has the relative permittivity of barium titanate with extended X7R-like properties to 250 degrees C -an X14R. After an extensive compositional and theoretical modeling investigation a composition was selected and capacitors developed. The dielectric has a 1-kHz relative permittivity of similar to 1200 with <+/- 15% variation from -25 to +250 degrees C and <5% loss from -55 to +250 degrees C. These capacitors also have very low voltage coefficients, indeed they are positive at the low end of the temperature range, resulting in a combined T-C-Vc capacitance variation 0%/-25% of nominal from -55 to +200 degrees C with applied voltage stress from 20 to 260 V/mil.
引用
收藏
页码:876 / 882
页数:7
相关论文
共 8 条
[1]  
Bridger K., 1992, 1992 IEEE 35th International Power Sources Symposium (Cat. No.92CH3109-6), P387, DOI 10.1109/IPSS.1992.281975
[2]  
Jones G. O., 2002, ACTA CRYSTALLOGR B, V58, P301
[3]   Lead-free piezoelectric ceramics of (Bi1/2Na1/2)TiO3-1/2(Bi2O3 center dot Sc2O3) system [J].
Nagata, H ;
Takenaka, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B) :6055-6057
[4]  
NEWNHAM RE, 1983, J MATER EDUC, V5, P947
[5]  
Prokopowicz T., 1969, ECOM90705F NTIS
[6]  
Walsh C., 2006, P IMAPS INT C HIGH T
[7]  
Walsh C., 2005, P 12 US JAP SEM DIEL
[8]  
Walsh CJ, 2004, 2004 14TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS-ISAF-04, P328