STABILITY OF METALLIC DIMERS ON THE SI(001) SURFACE

被引：42

作者：

BATRA, IP

机构：

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 63卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.63.1704

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1704 / 1707

页数：4

共 21 条

[1]

ABRAHAM FF, 1985, SURF SCI, V163, pL752, DOI 10.1016/0039-6028(85)91055-6

[2]

BACHELET CB, 1982, PHYS REV B, V26, P419

[3] LATTICE-RELAXATION IN ALUMINUM MONOLAYERS [J].

BATRA, IP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :1603-1606

[4]

BATRA IP, 1989, NATO ADV STUDY I SER, V195, P1

[5] SURFACE-STRUCTURES AND GROWTH-MECHANISM OF GA ON SI(100) DETERMINED BY LEED AND AUGER-ELECTRON SPECTROSCOPY [J].

BOURGUIGNON, B ;

CARLETON, KL ;

LEONE, SR .

SURFACE SCIENCE, 1988, 204 (03) :455-472

[6] TUNNELING IMAGES OF GALLIUM ON A SILICON SURFACE - RECONSTRUCTIONS, SUPERLATTICES, AND INCOMMENSURATION [J].

CHEN, DM ;

GOLOVCHENKO, JA ;

BEDROSSIAN, P ;

MORTENSEN, K .

PHYSICAL REVIEW LETTERS, 1988, 61 (25) :2867-2870

[7] SURFACE METALLIZATION OF SILICON BY POTASSIUM ADSORPTION ON SI(001)-(2X1) [J].

CIRACI, S ;

BATRA, IP .

PHYSICAL REVIEW B, 1988, 37 (06) :2955-2967

[8] MOMENTUM-SPACE FORMALISM FOR THE TOTAL ENERGY OF SOLIDS [J].

IHM, J ;

ZUNGER, A ;

COHEN, ML .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (21) :4409-4422

[9] MICROSCOPIC MODEL OF HETEROEPITAXY OF GAAS ON SI(100) [J].

KAXIRAS, E ;

ALERHAND, OL ;

JOANNOPOULOS, JD ;

TURNER, GW .

PHYSICAL REVIEW LETTERS, 1989, 62 (21) :2484-2486

[10]

KNALL J, 1986, SURF SCI, V166, P513

← 1 2 3 →