A STUDY ON HCL INTRINSIC GETTERING FOR APPLICATION TO BIPOLAR-DEVICES AND MOS LSIS

[11] PEARCE CW, 1977, ELECTROCHEMICAL SOC, P606

[12] PEARCE CW, 1981, ELECTROCHEMICAL SOC, P705

[13] ROLE OF SEQUENTIAL ANNEALING, OXIDATION, AND DIFFUSION UPON DEFECT GENERATION IN ION-IMPLANTED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1635 - 1642

[14] ROZGONYI GA, 1977, APPL PHYS LETT, V31, P343, DOI 10.1063/1.89693

[15] GETTERING OF SURFACE AND BULK IMPURITIES IN CZOCHRALSKI SILICON WAFERS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 747 - 749

[16] ROZGONYI GA, 1977, ELECTROCHEMICAL SOC, P616

[17] SHIRAKI H, 1977, ELECTROCHEMICAL SOC, P546

[18] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J]. APPLIED PHYSICS LETTERS, 1977, 30 (04) : 175 - 176

[19] A STUDY ON INTRINSIC GETTERING IN CZ SILICON-CRYSTALS - EVALUATION, THERMAL HISTORY DEPENDENCE, AND ENHANCEMENT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 374 - 379

[20] LIFETIME IMPROVEMENT IN CZOCHRALSKI-GROWN SILICON-WAFERS BY THE USE OF A 2-STEP ANNEALING [J]. APPLIED PHYSICS LETTERS, 1980, 36 (03) : 195 - 197

[11] PEARCE CW, 1977, ELECTROCHEMICAL SOC, P606

[12] PEARCE CW, 1981, ELECTROCHEMICAL SOC, P705

[13] ROLE OF SEQUENTIAL ANNEALING, OXIDATION, AND DIFFUSION UPON DEFECT GENERATION IN ION-IMPLANTED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1635 - 1642

[14] ROZGONYI GA, 1977, APPL PHYS LETT, V31, P343, DOI 10.1063/1.89693

[15] GETTERING OF SURFACE AND BULK IMPURITIES IN CZOCHRALSKI SILICON WAFERS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 747 - 749

[16] ROZGONYI GA, 1977, ELECTROCHEMICAL SOC, P616

[17] SHIRAKI H, 1977, ELECTROCHEMICAL SOC, P546

[18] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J]. APPLIED PHYSICS LETTERS, 1977, 30 (04) : 175 - 176

[19] A STUDY ON INTRINSIC GETTERING IN CZ SILICON-CRYSTALS - EVALUATION, THERMAL HISTORY DEPENDENCE, AND ENHANCEMENT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 374 - 379

[20] LIFETIME IMPROVEMENT IN CZOCHRALSKI-GROWN SILICON-WAFERS BY THE USE OF A 2-STEP ANNEALING [J]. APPLIED PHYSICS LETTERS, 1980, 36 (03) : 195 - 197