N-DEPENDENCE OF THE VALENCE-BAND OFFSET IN (GAAS)N(ALAS)N - ROLE OF CHARGE REDISTRIBUTION, INTERFACE DIPOLES, AND CATION 3D STATES

被引：11

作者：

MASSIDDA, S ^{[1
]}

MIN, BI ^{[1
]}

FREEMAN, AJ ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,DEPT PHYS & ASTRON,EVANSTON,IL 60208

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.38.1291

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1291 / 1295

页数：5

共 37 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2] RELATIVISTIC AND CORE-RELAXATION EFFECTS ON THE ENERGY-BANDS OF GALLIUM-ARSENIDE AND GERMANIUM [J].

BACHELET, GB ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1985, 31 (02) :879-887

[3] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION [J].

BATEY, J ;

WRIGHT, SL .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :200-209

[4] PROBING SEMICONDUCTOR SEMICONDUCTOR INTERFACES [J].

BAUER, RS ;

MARGARITONDO, G .

PHYSICS TODAY, 1987, 40 (01) :27-34

[5] ABINITIO (GAAS)3(ALAS)3 (001) SUPERLATTICE CALCULATIONS - BAND OFFSETS AND FORMATION ENTHALPY [J].

BYLANDER, DM ;

KLEINMAN, L .

PHYSICAL REVIEW B, 1987, 36 (06) :3229-3236

[6]

BYLANDER DM, UNPUB

[7] A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS [J].

CALDAS, MJ ;

FAZZIO, A ;

ZUNGER, A .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :671-673

[8] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J].

CARDONA, M ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1987, 35 (12) :6182-6194

[9] SPECIAL POINTS IN BRILLOUIN ZONE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753

[10]

CHRISTENSEN NE, UNPUB

← 1 2 3 4 →