PREPARATION AND PROPERTIES OF EPITAXIAL INAS

被引：34

作者：

MCCARTHY, JP

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 07期

关键词：

D O I：

10.1016/0038-1101(67)90095-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：649 / &

共 22 条

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[7] HEAT TREATMENT EFFECTS IN INDIUM ARSENIDE [J].

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[8] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J].

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[9]

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[10]

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