HOT-ELECTRON LUMINESCENCE IN IN0.53GA0.47AS TRANSISTOR CHANNEL

被引：4
作者：
MASTRAPASQUA, M
BERTHOLD, G
CANALI, C
LURYI, S
ZANONI, E
MANFREDI, M
SIVCO, DL
CHO, AY
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] UNIV PADUA,DIPARTIMENTO ELETTR & INFORMAT,I-35131 PADUA,ITALY
[3] UNIV MODENA,DIPARTIMENTO SCI INGN,I-41100 MODENA,ITALY
[4] UNIV PARMA,DIPARTIMENTO FIS,I-43100 PARMA,ITALY
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 11期
关键词：
D O I：
10.1063/1.113206
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Measurements of light emission are reported in the 1.1-2.5 eV energy range, by hot electrons in the In0.53Ga0.47As channel of a complementary charge injection transistor. By comparing electrical characteristics and light emission, there is the ability to identify the intraconduction band transitions as the main light emission mechanism. Hot-electron effective temperatures up to 2200 K have been determined from high energy exponential tails of the electroluminescence spectra.© 1995 American Institute of Physics.
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收藏
页码：1376 / 1378
页数：3
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