AUGER RECOMBINATION IN SI AT LOW-TEMPERATURES

被引:0
作者
DELIMOVA, LA
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1981年 / 15卷 / 07期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:778 / 780
页数:3
相关论文
共 19 条
[1]  
ABAKUMOV VN, 1977, SOV PHYS SEMICOND+, V11, P766
[2]  
ASHKINADZE BM, 1972, SOV PHYS SEMICOND+, V5, P1471
[3]   AUGER-RECOMBINATION IN SI [J].
BECK, JD ;
CONRADT, R .
SOLID STATE COMMUNICATIONS, 1973, 13 (01) :93-95
[4]  
BLINOV LM, 1968, FIZ TVERD TELA+, V9, P2537
[5]   AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].
DZIEWIOR, J ;
SCHMID, W .
APPLIED PHYSICS LETTERS, 1977, 31 (05) :346-348
[6]  
GREKHOV IV, 1977, SOV PHYS SEMICOND+, V11, P994
[7]  
GREKHOV IV, 1980, SOV PHYS SEMICOND+, V14, P529
[8]  
GRIVITSKAS VV, 1978, THESIS VILNIUS STATE
[9]   AUGER RECOMBINATION OF ELECTRON-HOLE DROPS [J].
HAUG, A .
SOLID STATE COMMUNICATIONS, 1978, 25 (07) :477-479
[10]  
HULDT L, 1979, APPL PHYS LETT, V35, P776, DOI 10.1063/1.90974