CARRIER CONCENTRATION-DEPENDENCE AND TEMPERATURE-DEPENDENCE OF MOBILITY IN SILICON (100) N-CHANNEL INVERSION-LAYERS AT LOW-TEMPERATURES

被引：27

作者：

KAWAGUCHI, Y ^{[1
]}

SUZUKI, T ^{[1
]}

KAWAJI, S ^{[1
]}

机构：

[1] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 36卷 / 03期

关键词：

D O I：

10.1016/0038-1098(80)90272-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：257 / 259

页数：3

共 50 条

[1] TEMPERATURE-DEPENDENCE OF MOBILITY IN SILICON (100) INVERSION-LAYERS AT LOW-TEMPERATURES
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[4] TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF A SILICON INVERSION LAYER AT LOW-TEMPERATURES
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[9] TEMPERATURE-DEPENDENT RESISTIVITIES IN SILICON INVERSION-LAYERS AT LOW-TEMPERATURES
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[10] TEMPERATURE-DEPENDENCE OF THE RESISTIVITY OF N-TYPE SI INVERSION-LAYERS
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