Recent Advances in High Performance CMOS Transistors: From Planar to Non-Planar

Some of the latest advancements in high performance CMOS transistors are discussed. The need for further scaling of the transistors will require the transistor structure itself to evolve, while strained silicon and high-k/metalgate technologies will continue to play significant roles in advancing the existing CMOS technology. A transition for the present planar structure to non-planar, three-dimensional (3D) structures such as the tri-gate transistor is urgently needed to improve the short-channel performance and enhance scalability. This transition is inevitable as the high-k/metal gate stack with even low equivalent oxide thickness (EOT) is insufficient to control the source to drain leakage after the gate length is aggressively scaled and the source-drain extension regions approach each other. Significant interest has also been generated and progress made in the research of non-silicon electronic materials to replace the silicon channel for future logic applications, and their potential integration onto the silicon platform.