SURFACE STATE RELATED 1/F NOISE IN MOS TRANSISTORS

被引：80
作者：
HSU, ST
机构：
来源：
SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 11期
关键词：
D O I：
10.1016/0038-1101(70)90081-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1451 / +
页数：1
相关论文
共 30 条
[11]   EXCESS NOISE IN FIELD-EFFECT TRANSISTORS [J].
HALLADAY, HE ;
BRUNCKE, WC .
PROCEEDINGS OF THE IEEE, 1963, 51 (11) :1671-&
[12]  
HAWKINS RJ, 1969, BRIT J APPL PHYS, V22, P1059
[13]   EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J].
HEIMAN, FP ;
WARFIELD, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) :167-&
[14]  
HSU ST, 1970, IEEE T ELECTRON DEV, VED17, P496, DOI 10.1109/T-ED.1970.17021
[15]   SURFACE STATE RELATED 1/F NOISE IN P!N JUNCTIONS [J].
HSU, ST .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :843-+
[16]   SURFACE-STATE RELATED L/F NOISE IN P-N JUNCTIONS AND MOS TRANSISTORS [J].
HSU, ST ;
FITZGERALD, DJ ;
GROVE, AS .
APPLIED PHYSICS LETTERS, 1968, 12 (09) :287-+
[17]   A THEORY OF 1/F NOISE AT SEMICONDUCTOR SURFACES [J].
JANTSCH, O .
SOLID-STATE ELECTRONICS, 1968, 11 (02) :267-+
[18]  
JORDAN AG, 1967, IEEE T ELECTRON DEV, VED12, P833
[19]  
KANAKA T, 1969, JPN J APPL PHYS, V8, P1020
[20]   IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J].
LEHOVEC, K ;
SLOBODSKOY, A .
SOLID-STATE ELECTRONICS, 1964, 7 (01) :59-79
123