SURFACE STATE RELATED 1/F NOISE IN MOS TRANSISTORS

被引：80
作者：
HSU, ST
机构：
来源：
SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 11期
关键词：
D O I：
10.1016/0038-1101(70)90081-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1451 / +
页数：1
相关论文
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