POSITRON-ANNIHILATION IN BORON-IMPLANTED N-TYPE SILICON

被引：4
|
作者：
HUNG, MC [1 ]
LUE, JT [1 ]
YEH, CK [1 ]
机构：
[1] INST NUCL ENERGY RES,LUNGTAN 325,TAIWAN
来源：
SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 12期
关键词：
D O I：
10.1016/0038-1098(79)90858-5
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1169 / 1172
页数：4
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