PHOTOLUMINESCENCE OF CDIN2S4 AND MIXED CRYSTALS WITH IN2S3 AS RELATED TO THEIR STRUCTURAL PROPERTIES

In this paper experiments on photoluminescence (emission and excitation spectra) of CdIn2S4 crystals and of mixed crystals with In2S3 at 77°K are reported. The results are interpreted on the basis of the partial inversion of the thiospinel CdIn2S4. In CdIn2S4 the two emission bands observed in the red spectral region are ascribed to a Cd ion at an octahedral site and an In ion at a tetrahedral site. This model describes the intensity and wavelength variation of the photoluminescence of the mixed crystal system CdIn2S4/In2S3 surprisingly well. Evidence is given that the energy gap in all these crystals is indirect. In an appendix some etching procedures are listed. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim