SWITCHING CHARACTERISTICS OF A THIN-FILM SOI POWER MOSFET

被引：18

作者：

MATSUMOTO, S

KIM, IJ

SAKAI, T

FUKUMITSU, T

YACHI, T

机构：

[1] NTT Interdisciplinary Research Laboratories, Musashino-Shi, Tokyo, 180, 3-9-11, Midori-cho

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

SOI; POWER MOSFET; DEVICE SIMULATION;

D O I：

10.1143/JJAP.34.817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper describes switching characteristics of a thin-film silicon-on-insulator (SOI) power metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the results of numerically simulating thin-film SOI power MOSFETs lathe 50-V class. The dependence of the rise time and fall time on the doping concentration of the substrate, on the doping type of the substrate, and on the thickness of the buried oxide layer are studied. In addition, the optimum device structure of the thin-film SOI power MOSFET for high-frequency switching application is also described.

引用

页码：817 / 821

页数：5

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