ION-IMPLANTATION STUDY OF HGCDTE

被引：38

作者：

BUBULAC, LO

TENNANT, WE

SHIN, SH

WANG, CC

LANIR, M

GERTNER, ER

MARSHALL, ED

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S1.495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：495 / 500

页数：6

共 14 条

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[2] HG-IMPLANTED HG1-XCDXTE INFRARED PHOTOVOLTAIC DETECTORS IN 8- TO 14-MU-M RANGE [J].

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SVELTO, F .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :448-449

[3] TYPE CONVERSION AND N-P JUNCTION FORMATION IN HG1-XCDXTE PRODUCED BY PROTON BOMBARDMENT [J].

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[4]

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[5]

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[6] BACKSIDE-ILLUMINATED HGCDTE-CDTE PHOTO-DIODES [J].

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APPLIED PHYSICS LETTERS, 1979, 34 (01) :50-52

[7] INFRARED PHOTOVOLTAIC DETECTORS FROM ION-IMPLANTED CDXHG1-XTE [J].

MARINE, J ;

MOTTE, C .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :450-452

[8]

MOLL JL, 1964, PHYSICS SEMICONDUCTO, pCH7

[9] ANODIC-OXIDATION OF GAAS AS A TECHNIQUE TO EVALUATE ELECTRICAL CARRIER CONCENTRATION PROFILES [J].

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MAYER, JW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) :651-655

[10] DIFFUSION LENGTH DETERMINATION IN THIN-FILM CUXS-CDS SOLAR-CELLS BY SCANNING ELECTRON-MICROSCOPY [J].

OAKES, JJ ;

GREENFIELD, IG ;

PARTAIN, LD .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (06) :2548-2555

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