STUDIES OF SUBMICRON GOLD ISLANDS ON SILICON BY STM

被引：8
作者：
GHEBER, LA
GORODETSKY, G
VOLTERRA, V
机构：
[1] Physics Department, Ben-Gurion University of the Negev, Beer-Sheva
来源：
THIN SOLID FILMS | 1994年 / 238卷 / 01期
关键词：
D O I：
10.1016/0040-6090(94)90637-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The formation and electrical properties of discrete islands in discontinuous Au films on Si(111) were studied with a scanning tunneling microscope (STM). Ohmic electrical contact between the STM tip and isolated gold islands was established and I-V characteristics of the Au-Si junctions were measured. A typical Schottky diode behaviour with ideality factor close to 1 was observed. The STM appears to be an appropriate probe for electrical measurements of nano-scale diodes.
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页码：1 / 3
页数：3
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