THICKNESS DEPENDENT STUDIES OF DIELECTRIC BREAKDOWN IN LANGMUIR THIN MOLECULAR FILMS

被引：19

作者：

AGARWAL, VK ^{[1
]}

SRIVASTA.VK ^{[1
]}

机构：

[1] UNIV ROORKEE, DEPT PHYS, ROORKEE, INDIA

来源：

SOLID STATE COMMUNICATIONS | 1973年 / 12卷 / 09期

关键词：

D O I：

10.1016/0038-1098(73)90088-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：829 / 834

页数：6

共 23 条

[1] TEMPERATURE DEPENDENCE OF DC DESTRUCTIVE BREAKDOWN FIELD IN BUILT-UP BARIUM STEARATE FILMS [J].

AGARWAL, DK ;

SRIVASTAVA, VK .

SOLID STATE COMMUNICATIONS, 1972, 11 (10) :1461-+

[2] TEMPERATURE-DEPENDENCE OF BREAKDOWN FIELD IN BARIUM STEARATE MULTILAYER FILMS [J].

AGARWAL, DK ;

SRIVASTAVA, VK .

THIN SOLID FILMS, 1972, 14 (02) :367-371

[3] THICKNESS DEPENDENCE OF BREAKDOWN FIELD IN THIN FILMS [J].

AGARWAL, VK ;

SRIVASTAVA, VK .

THIN SOLID FILMS, 1971, 8 (05) :377-+

[4] THICKNESS DEPENDENCE OF BREAKDOWN FIELD [J].

AGARWAL, VK ;

SRIVASTA.VK .

THIN SOLID FILMS, 1972, 13 (02) :S23-S24

[5]

AGARWAL VK, IN PRESS

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Blodgett, KB .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1935, 57 (01) :1007-1022

[7] Built-up films of barium stearate and their optical properties [J].

Blodgett, KB ;

Langmuir, I .

PHYSICAL REVIEW, 1937, 51 (11) :0964-0982

[8] BREAKDOWN CONDUCTION IN AL-SIO-AL CAPACITORS [J].

BUDENSTEIN, PP ;

HAYES, PJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2837-+

[9] DESTRUCTIVE BREAKDOWN IN THIN FILMS OF SIO MGF2 CAF2 CEF3 CEO2 AND TEFLON [J].

BUDENSTEIN, PP ;

HAYES, PJ ;

SMITH, JL ;

SMITH, WB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (02) :289-+

[10] INTERPRETATION OF DESTRUCTIVE BREAKDOWN IN THIN DIELECTRIC FILMS [J].

BUDENSTEIN, PP ;

HAYES, PJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :602-+

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