DEPOSITION AND CHARACTERIZATION OF ZINC-OXIDE THIN-FILMS FOR HYDROGEN SENSOR DEVICES

被引：10

作者：

DUTTA, A ^{[1
]}

CHAUDHURI, TK ^{[1
]}

BASU, S ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,SEMICOND PREPARAT & PROC LAB,KHARAGPUR 721302,W BENGAL,INDIA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 14卷 / 01期

关键词：

D O I：

10.1016/0921-5107(92)90324-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline zinc oxide thin films with thicknesses in the range 0.3-mu-m-1-mu-m were deposited on silicon and alumina substrates by a spray chemical vapour deposition method. The film was characterized for crystallinity, resistivity and carrier concentration. A modified heterostructure Pd/ZnO(0.38-mu-m)/p-Si device was fabricated. The current-voltage characteristics of the device were studied both in the absence and in the presence of hydrogen gas.

引用

页码：31 / 35

页数：5

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