TEMPORAL AND FREQUENCY-RESPONSE OF AVALANCHE PHOTO-DIODES FROM NOISE MEASUREMENTS

被引：14
作者：
ANDERSSON, T
JOHNSTON, AR
EKLUND, H
机构：
[1] LM ERICSSON TELEPHONE CO,S-12625 STOCKHOLM,SWEDEN
[2] CALTECH,JET PROP LAB,PASADENA,CA 91103
来源：
APPLIED OPTICS | 1980年 / 19卷 / 20期
关键词：
D O I：
10.1364/AO.19.003496
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：3496 / 3499
页数：4
相关论文
共 19 条
[1]  
ANDERSON LK, 1963, P IEEE
[2]  
ANDERSSON T, 1980, 8076 CHALM U TECHN D
[3]   AVALANCHE PHOTODIODES WITH A GAIN-BANDWIDTH PRODUCT OF MORE THAN GHZ-200 [J].
BERCHTOLD, K ;
KRUMPHOLZ, O ;
SURI, J .
APPLIED PHYSICS LETTERS, 1975, 26 (10) :585-587
[4]  
DUMANT JM, 1976, ONDE ELECTRIQUE, V56, P609
[5]   AVALANCHE-PHOTODIODE FREQUENCY RESPONSE [J].
EMMONS, RB .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3705-+
[6]  
GUILLEMIN EA, 1963, THEORY LINEAR PHYSIC
[7]  
JOHANSSON J, UNPUBLISHED
[8]   AVALANCHE BUILDUP TIME OF SILICON REACH-THROUGH PHOTODIODES [J].
KANEDA, T ;
TAKANASHI, H ;
MATSUMOTO, H ;
YAMAOKA, T .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :4960-4963
[9]   AVALANCHE BUILDUP TIME OF SILICON AVALANCHE PHOTODIODES [J].
KANEDA, T ;
TAKANASHI, H .
APPLIED PHYSICS LETTERS, 1975, 26 (11) :642-644
[10]   QUASISTATIC APPROXIMATION FOR SEMICONDUCTOR AVALANCHES [J].
KUVAS, R ;
LEE, CA .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1743-&
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